纳米粒子形成装置
电弧等离子体蒸发源
APS-1
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通过将本蒸发源增设在既存的电弧等离子法纳米粒子形成装置APD系列和手持式真空腔体中,可以同时蒸发不同的"蒸发材料",生成具有新特性的材料。
特点
- 纳米颗粒的尺寸比传统的湿法更均匀,因此能够生产高活性催化剂
- 纳米颗粒尺寸约1.5nm至6nm可选
- 通过改变环境可以容易地产生氧化物和氮化物
- 如果有与ICF 070(VG 50)相当的法兰,无论那个方向都可以安装
- 无需水冷设备,方便维护
用途
- 多个蒸发源化合物的生成
- 添加到现有的真空室
规格
Target size | Φ 10mm × L 17 mm |
---|---|
Substrate size | Φ 2 inch (Φ 50 mm) |
Deposition rate | 0.01 nm/s ~ 0.3 nm/s *1 |
Film thickness uniformity | Fe: < ± 10 % (Φ 20 mm area) *1 |
Materials Available for deposition | Conductive materials *2 |
*1 Distance from a target to a substrate: 80mm
*2 Specific resistance of a target: 0.01Ωcm or less
Schematic of the Arc Plasma Source(APS)

Utility
System diagram

1. Condenser box:W110 x D320 x H200 (mm)
2. Body of APS within vacuum chamber:Φ34 x L200 (mm)
3. Power supply unit:W200 x D360 x H200 (mm)
4. Controller:W240 x D400 x H200 (mm)
※Put power supply unit & controller onto the rack.
TEM Images for Nano-Particles prepared by APS

(From left)
- TEM image of Pt nano-particles supported on
Well-dispersed Pt nano-particles on the carbon powder are deposited. - TEM image of Pt nono-particles on a substrate
The size of nano-particle becomes larger as the pulse number of arc plasma shots is increased. - TEM image of Pt thin film
Extremely thin Pt film is formed by a stacking of nano-particles.
Photos of Deposition System installing APS

Example 1 : Sputtering system with APS

Example 2 : Arc Plasma Deposition system with one APS(APD-1P)
Table 1 Elements checked for deposition
1A | 2A | 3A | 4A | 5A | 6A | 7A | 8 | 1B | 2B | 3B | 4B | 5B | 6B | 7B | 0 | |||
1 | H | He | ||||||||||||||||
2 | Li | Be | B | C | N | O | F | Ne | ||||||||||
3 | Na | Mg | Al | Si | P | S | Cl | Ar | ||||||||||
4 | K | Ca | Sc | Ti | V | Cr | Mn | Fe | Co | Ni | Cu | Zn | Ga | Ge | As | Se | Br | Kr |
5 | Rb | Sr | Y | Zr | Nb | Mo | Tc | Ru | Rh | Pd | Ag | Cd | In | Sn | Sb | Te | I | Xe |
6 | Cs | Ba | Lanthanoid | Hf | Ta | W | Re | Os | Ir | Pt | Au | Hg | TI | Pb | Bi | Po | At | Rn |
7 | Fr | Ra | Actinoid |
Checked Limited in use