APS-1|电弧等离子体蒸发源|纳米粒子形成装置|热处理・热物性评估装置|产品中心|ULVAC SHOWCASE

纳米粒子形成装置
电弧等离子体蒸发源
APS-1

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关于APS-1的介绍、购买、商讨

同时蒸发不同的"蒸发材料"。
通过将本蒸发源增设在既存的电弧等离子法纳米粒子形成装置APD系列和手持式真空腔体中,可以同时蒸发不同的"蒸发材料",生成具有新特性的材料。

特点

  • 纳米颗粒的尺寸比传统的湿法更均匀,因此能够生产高活性催化剂
  • 纳米颗粒尺寸约1.5nm至6nm可选
  • 通过改变环境可以容易地产生氧化物和氮化物
  • 如果有与ICF 070(VG 50)相当的法兰,无论那个方向都可以安装
  • 无需水冷设备,方便维护

用途

  • 多个蒸发源化合物的生成
  • 添加到现有的真空室

规格

Target size Φ 10mm × L 17 mm
Substrate size Φ 2 inch (Φ 50 mm)
Deposition rate 0.01 nm/s ~ 0.3 nm/s *1
Film thickness uniformity Fe: < ± 10 % (Φ 20 mm area) *1
Materials Available for deposition Conductive materials *2

*1 Distance from a target to a substrate: 80mm
*2 Specific resistance of a target: 0.01Ωcm or less

Schematic of the Arc Plasma Source(APS)

img_aps-101-en.png

Utility

System diagram

img_aps-105-en.png

1. Condenser box:W110 x D320 x H200 (mm)
2. Body of APS within vacuum chamber:Φ34 x L200 (mm)
3. Power supply unit:W200 x D360 x H200 (mm)
4. Controller:W240 x D400 x H200 (mm)

※Put power supply unit & controller onto the rack.

TEM Images for Nano-Particles prepared by APS

img_aps-102.jpg

(From left)

  • TEM image of Pt nano-particles supported on
    Well-dispersed Pt nano-particles on the carbon powder are deposited.
  • TEM image of Pt nono-particles on a substrate
    The size of nano-particle becomes larger as the pulse number of arc plasma shots is increased.

  • TEM image of Pt thin film
    Extremely thin Pt film is formed by a stacking of nano-particles.

Photos of Deposition System installing APS

img_aps-103.jpg

Example 1 : Sputtering system with APS

img_aps-104.jpg

Example 2 : Arc Plasma Deposition system with one APS(APD-1P)

Table 1 Elements checked for deposition

1A 2A 3A 4A 5A 6A 7A 8 1B 2B 3B 4B 5B 6B 7B 0
1 H He
2 Li Be B C N O F Ne
3 Na Mg Al Si P S Cl Ar
4 K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr
5 Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb Te I Xe
6 Cs Ba Lanthanoid Hf Ta W Re Os Ir Pt Au Hg TI Pb Bi Po At Rn
7 Fr Ra Actinoid

Checked   Limited in use

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