热电评估装置
热电特性评价装置 ZEM-5系列

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本系列对应各种热电材料的特性及薄膜等特殊规格。
针对各种材料的特点，比如高温、高电阻、薄膜等，是能满足各种需求的热电特性评价装置。

用途

半导体，陶瓷和金属等多种材料的热电特性评估

特点

适用于各种热电材料和薄膜等特殊规格
温度检测传感器采用C型热电偶，非常适合评估Si基热电材料（SiGe，MgSi等）（HT型）
标准配备V / I图，用于欧姆接触的自我诊断
可以测量高达1200℃（HT型）
支持高达10MΩ的高电阻（HR型）
能够测量沉积在基板上的材料（TF型）
‐温度控制可以在150℃至200℃之间（LT型）

专利和标准

热电JIS R 1650-1
抵抗力JIS R 1650-2

规格

Model	ZEM-5HT	ZEM-5HR	ZEM-5LT	ZEM-5TF
Features	High temperature	High resistance	Low and middle temperature	Thin film
Temperature Range	100℃～1200℃	100℃～800℃	-150℃～200℃	50℃～500℃
Sample Size	2 to 4 mm square or Φ2 to 4 mm x 3 to 15 mm length			Deposited substrate:2 to 4 mm width x 0.4 to 1.2 mm thickness mm x 20 mm length Thin film thickness: nm scale or thicker *An insulation layer is required between the sample film and the substrate
Thermocouple	C	R	K	R
Measurement accuracy	Seebeck coefficient: ±7% Electric resistivity: ±7% (less than 5mm long sample is not eligible.)

Constitution

Sample measurement, control and measurement assy. 1 set
Data acquisition. 1 set
Atmosphere controller. 1 set

Utility(HT type)

Power	Main body AC200V, 40A 1 location PC AC100V, 10A 2 locations
Cooling water	Water pressure 0.15 MPa Flow rate 5L/min
Atmosphere gas	Low pressure He gas 0.2 MPa (Low pressure and static atmosphere)
Space requirement	Approx.750mmW × 900mmD (Installed on table)

Seebeck coefficient calculation method

Seebeck coefficient measurement shall be done by changing 3 temperature gradients and dividing dark electromotive force.

Setting and measurement screen

Temperature setting screen

V/I plot screen

热电特性评价装置

ZEM-5系列

ULVAC EQUIPMENT SALES

本系列对应各种热电材料的特性及薄膜等特殊规格。
针对各种材料的特点，比如高温、高电阻、薄膜等，是能满足各种需求的热电特性评价装置。

用途

半导体，陶瓷和金属等多种材料的热电特性评估

特点

适用于各种热电材料和薄膜等特殊规格
温度检测传感器采用C型热电偶，非常适合评估Si基热电材料（SiGe，MgSi等）（HT型）
标准配备V / I图，用于欧姆接触的自我诊断
可以测量高达1200℃（HT型）
支持高达10MΩ的高电阻（HR型）
能够测量沉积在基板上的材料（TF型）
‐温度控制可以在150℃至200℃之间（LT型）

专利和标准

热电JIS R 1650-1
抵抗力JIS R 1650-2

规格

Model	ZEM-5HT	ZEM-5HR	ZEM-5LT	ZEM-5TF
Features	High temperature	High resistance	Low and middle temperature	Thin film
Temperature Range	100℃～1200℃	100℃～800℃	-150℃～200℃	50℃～500℃
Sample Size	2 to 4 mm square or Φ2 to 4 mm x 3 to 15 mm length			Deposited substrate:2 to 4 mm width x 0.4 to 1.2 mm thickness mm x 20 mm length Thin film thickness: nm scale or thicker *An insulation layer is required between the sample film and the substrate
Thermocouple	C	R	K	R
Measurement accuracy	Seebeck coefficient: ±7% Electric resistivity: ±7% (less than 5mm long sample is not eligible.)

Constitution

Sample measurement, control and measurement assy. 1 set
Data acquisition. 1 set
Atmosphere controller. 1 set

Utility(HT type)

Power	Main body AC200V, 40A 1 location PC AC100V, 10A 2 locations
Cooling water	Water pressure 0.15 MPa Flow rate 5L/min
Atmosphere gas	Low pressure He gas 0.2 MPa (Low pressure and static atmosphere)
Space requirement	Approx.750mmW × 900mmD (Installed on table)

Seebeck coefficient calculation method

Seebeck coefficient measurement shall be done by changing 3 temperature gradients and dividing dark electromotive force.

Setting and measurement screen

Temperature setting screen

V/I plot screen