Infrared Gold Image Furnace / RTA System
Rapid Thermal Annealing System
RTA series
ULVAC EQUIPMENT SALES
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High speed heat treatment from 2 inches to 300 mm 10 seconds until retention. Infrared lamp heating is the method which can take advantage of its features of High energy density, Near infrared rays, High heat responsiveness, Temperature controllability, and Cold wall method.
Features
- Capable of 200℃/s max. flash annealing.
- Compatible with C to C robot transport systems.
- Can be linked with semiconductor manufacturing equipment.
- Zone output control of lamps to perform uniform heat treatment of multi-wafers.
Applications
- Activation annealing after ion implantation.
- Oxide film deposition annealing.
- Ohmic electrode alloying.
- Crystallization annealing of PZT, SBT and other ferroelectric thin films.
- Si wafer donor-killer processing.
- Silicide formation, salicide formation.
- Heat treatment of light emitting elements, semiconductor laser substrates.
- Ultra-shallow junction formation.
- Ferroelectric capacitor deposition.
- Gate oxide film formation.
Specifications
（From the left）
- RTA-4000 CtoC
- RTA-2000
- RTA-6000
| Model | Sample Size | Temperature Range | Max. Heating Rate | Atmosphere |
|---|---|---|---|---|
| RTA-2000 | Φ2-inch × 1 piece | RT ～ 1000℃ | 100℃ /s | In Air, Vacuum, Static gas, Gas flow |
| RTA-4000 | Φ3 ～ 4-inch × 1 piece | 200℃ /s | ||
| RTA-6000 | Φ4 ～ 6-inch × 1 piece | 200℃ /s | ||
| RTA-8000 | Φ6 ～ 8-inch × 1 piece | 200℃ /s | ||
| RTA-12000 | Φ300mm × 1 piece | 100℃ /s |
※ For other specification requirements, such as Single wafer processing, Flash annealing, C to C type, Other heating temperature, Gas type, Vacuum degree, please feel free to contact us.
RTA-2000 chamber part
RTA-12000 chamber part
