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热导率测量系统

2ω法纳米薄膜热传导率计

TCN-2ω

アルバック販売

能简单地评估纳米薄膜的热传导率。
在2ω测量中,是测量纳米薄膜厚度方向的热传导率的世界唯一的商用设备。
与其他方式相比,能简单地进行试料的制作和测量。

特点

  • 测量纳米级薄膜的导热系数
  • 样品准备简单

用途

  • 适合热设计所需薄膜的热导率评估(半导体器件薄膜,有机薄膜,Low-k薄膜)
  • 也可以评估热电转换材料的薄膜

规格

Measurement Properties RT
Sample size W10 × L10 ~ 20 × t0.3 ~ 1 (mm) (Substrate)
Measurement Atomosphere Vacuum

专利和标准

热性能测量方法(日本专利第5426115号)

Measurement principle

Metal thin film is heated by the periodic heating method with the basic frequency ( f / Hz). As a result, the response frequency with the thermal energy, 2 f / Hz, is equal to two times as large as the basic one. In the case of the film composed of metal thin film (0) – thin film (1) – substrate (s) as shown in Figure, the temperature increase T(0) on the upper surface for the metal thin film can be calculated on the basis of one-dimensional heat conduction model. Assuming that the energy completely arrived at the bottom substrate, T(0) is following the equation,

img_tcn-2omega05_1.gif

(λ / W m-1 K-1, C / J K-1 m-3, q/ W m-3, d / m , ω (=2πf ) / s-1

We note that the real part (in-phase amplitude) contains the information for the thin film. Assuming that the thermal energy completely arrives at the bottom substrate, the in-phase amplitude is proportional to (2ω)-0.5. Thermal conductivity for the thin film (λ1) is estimated from
(m:slope, n: intercept)

img_tcn-2omega06_1.gif

img_tcn-2omega01_1.png

Schematic figure of TCN-2ω

img_tcn-2omega02_01.png

Experimental result for various SiO2 thin films measured by TCN-2ω

img_tcn-2omega03_1.png

Evaluation in thin film

img_tcn-2omega04_1.png

Sample preparation

SiO2film (20-100nm)- Si substrate

d1 / nm 19.9 51.0 96.8
λ1 / Wm-1 K-1 0.82 1.12 1.20

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