热导率测量系统
2ω法纳米薄膜热传导率计
TCN-2ω
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关于TCN-2ω的介绍、购买、商讨
在2ω测量中，是测量纳米薄膜厚度方向的热传导率的世界唯一的商用设备。
与其他方式相比，能简单地进行试料的制作和测量。
特点
- 测量纳米级薄膜的导热系数
- 样品准备简单
用途
- 适合热设计所需薄膜的热导率评估（半导体器件薄膜，有机薄膜，Low-k薄膜）
- 也可以评估热电转换材料的薄膜
规格
| Measurement Properties | RT |
|---|---|
| Sample size | W10 × L10 ～ 20 × t0.3 ～ 1 (mm) (Substrate) |
| Measurement Atomosphere | Vacuum |
专利和标准
热性能测量方法（日本专利第5426115号）
Measurement principle
Metal thin film is heated by the periodic heating method with the basic frequency ( f / Hz). As a result, the response frequency with the thermal energy, 2 f / Hz, is equal to two times as large as the basic one. In the case of the film composed of metal thin film (0) – thin film (1) – substrate (s) as shown in Figure, the temperature increase T(0) on the upper surface for the metal thin film can be calculated on the basis of one-dimensional heat conduction model. Assuming that the energy completely arrived at the bottom substrate, T(0) is following the equation,
（λ / W m-1 K-1, C / J K-1 m-3, q/ W m-3, d / m , ω (=2πf ) / s-1）
We note that the real part (in-phase amplitude) contains the information for the thin film. Assuming that the thermal energy completely arrives at the bottom substrate, the in-phase amplitude is proportional to (2ω)-0.5. Thermal conductivity for the thin film (λ1) is estimated from
(m:slope, n: intercept）
Schematic figure of TCN-2ω
Experimental result for various SiO2 thin films measured by TCN-2ω
Evaluation in thin film
Sample preparation
SiO2film （20-100nm）- Si substrate
| d1 / nm | 19.9 | 51.0 | 96.8 |
|---|---|---|---|
| λ1 / Wm-1 K-1 | 0.82 | 1.12 | 1.20 |
