Thermal Conductivity Measurement System
2-Omega Method Nano Thin Film Thermal Conductivity Meter
TCN-2ω
アルバック販売
TCN-2ω is the world's only system which can measure thermal conductivity for a nano thin film at normal direction.
Features
- Available to measure thermal conductivity of thin film (20 ～ 1000nm thickness) deposited on a substrate
- Actualize the measurement of detecting temperature change by thermo-reflectance method
- Simply pre-treated for a sample
Applications
- Best suited for evaluation of thermal conductivity of thin film required for thermal design. Low-K insulating film, Organic thin film, Thin film of thermoelectric materials
- Development on an insulating film and improvement of its heat dissipation
- Application evaluation to thermoelectric thin films
Specifications
| Measurement Properties | RT |
|---|---|
| Sample size | W10 × L10 ～ 20 × t0.3 ～ 1 (mm) (Substrate) |
| Measurement Atomosphere | Vacuum |
A patent and a standard
Measurement method of thermophysical properties（Japan Patent No.5426115）
Measurement principle
Metal thin film is heated by the periodic heating method with the basic frequency ( f / Hz). As a result, the response frequency with the thermal energy, 2 f / Hz, is equal to two times as large as the basic one. In the case of the film composed of metal thin film (0) ? thin film (1) ? substrate (s) as shown in Figure, the temperature increase T(0) on the upper surface for the metal thin film can be calculated on the basis of one-dimensional heat conduction model. Assuming that the energy completely arrived at the bottom substrate, T(0) is following the equation,
（λ / W m-1 K-1, C / J K-1 m-3, q/ W m-3, d / m , ω (=2πf ) / s-1）
We note that the real part (in-phase amplitude) contains the information for the thin film. Assuming that the thermal energy completely arrives at the bottom substrate, the in-phase amplitude is proportional to (2ω)-0.5. Thermal conductivity for the thin film (λ1) is estimated from
(m:slope, n: intercept）
Schematic figure of TCN-2ω
Experimental result for various SiO2 thin films measured by TCN-2ω
Evaluation in thin film
Sample preparation
SiO2film （20-100nm）- Si substrate
| d1 / nm | 19.9 | 51.0 | 96.8 |
|---|---|---|---|
| λ1 / Wm-1 K-1 | 0.82 | 1.12 | 1.20 |
